High On/Off Current Ratio and High V th/R on Stability GaN MIS-HEMTs With GaN/AlN Superlattices Barrier-Reference-Cited by-同舟云学术

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High On/Off Current Ratio and High V _th/R _on Stability GaN MIS-HEMTs With GaN/AlN Superlattices Barrier

Published:2024-05 Issue:5 Volume:71 Page:2920-2924
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Li Shanjie¹^ORCID,Zeng Fanyi²,Xing Zhiheng²,Wu Nengtao¹^ORCID,Cao Ben²,Luo Ling²,Wu Changtong²,Wang Wenliang²^ORCID,Li Guoqiang³^ORCID

Affiliation:

1. School of Physics and Optoelectronics, South China University of Technology, Guangzhou, China

2. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, China

3. School of Physics and Optoelectronics and State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, China

Funder

National Key Research and Development Project

National Natural Science Foundation of China

Key Area Research and the Technology Development Project of Shanxi-Zheda Institude of Advanced Materials and Chemical Engineering

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10508280/10472438.pdf?arnumber=10472438

Reference32 articles.

1. GaN-on-Si Power Technology: Devices and Applications

2. Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

3. A High-Performance GaN-Modified Nonuniform Distributed Power Amplifier

4. Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation

5. Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High-$\kappa$ Dielectric

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