Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs-Reference-Cited by-同舟云学术

Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs

Published:2012-05 Issue: Volume:717-720 Page:437-440
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Strenger Christian¹,Haeublein Volker²,Erlbacher Tobias²^ORCID,Bauer Anton J.²,Ryssel Heiner²,Beltran Ana Maria³,Schamm-Chardon Sylvie³,Mortet Vincent³,Bedel-Pereira Eléna³,Lefebvre Mathieu³,Cristiano Fuccio³

Affiliation:

1. University of Erlangen-Nuremberg

2. Fraunhofer Institute of Integrated Systems and Device Technology (IISB)

3. University of Toulouse

Abstract

N-channel MOSFETs were manufactured on p-type and on p-implanted, n-type 4H-SiC substrates. The electron mobility in the inversion channel was measured to be correlated with the structural and chemical properties determined by transmission electron microscopy. With regard to what was previously discussed in the literature, interfacial layer formation and carbon distribution across the SiC/SiO2 interface were considered in relation with the measured Hall electron mobility.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.717-720.437.pdf

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