Relationship between 4H-SiC∕SiO2 transition layer thickness and mobility
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3144272
Reference21 articles.
1. J. A. Cooper, M. R. Melloch, J. M. Woodall, J. Spitz, K. J. Schoen, and J. P. Henning,Silicon Carbide, Iii-Nitrides and Related Materials(Enfield Publishing & Distribution, Enfield, New Hampshire, 1998), Vol. 264, Pts 1 and 2, p. 895.
2. Silicon carbide MOSFET technology
3. Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype
4. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
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