Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126167
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1. Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype
2. Intrinsic SiC/SiO2 Interface States
3. Improved oxidation procedures for reduced SiO2/SiC defects
4. Effect of epilayer characteristics and processing conditions on the thermally oxidized SiO2/SiC interface
5. Advances in SiC MOS Technology
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