Improved oxidation procedures for reduced SiO2/SiC defects-Reference-Cited by-同舟云学术

Improved oxidation procedures for reduced SiO2/SiC defects

Published:1996-05 Issue:5 Volume:25 Page:909-915
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Lipkin L. A.,Palmour J. W.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02666657.pdf

Reference19 articles.

1. J.W. Palmour, J.A. Edmond, H.S. Kong and C.H. Carter, Jr.,Amorphous and Crystalline Silicon Carbide TV, 71, eds. C.Y. Yang, M.M. Rahman, and G.L. Harris (Berlin: Springer-Verlag, 1992), p. 289.

2. S.M. Tang, W.B. Berry, R. Kwor, M.V. Zeller and L.G. Matus,J. Electrochem. Soc. 137 (1), 221 (1990).

3. S. Zaima, K. Onoda, Y. Koide and Y. Yasuda,J. Appl. Phys. 68 (12), 6304 (1990).

4. C.-M. Zetterling and M. Ostling,Diamond, SiC, and Nitride Wide Bandgap Semiconductors, 339, eds. C.H. Carter, Jr. G. Gildenblatt, S. Nakamura and R.J. Nemanich (Pittsburgh, PA: Materials Research Society, 1994), p. 209.

5. N. N. Singh and A. Rys,Silicon Carbide and Related Materials, 137, eds. M.G. Spencer, R.P. Devaty, J.A. Edmond, M.A. Khan, R. Kaplan and M. Rahman (Bristol: Inst. of Phys., 1994), p. 325.

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