Effects of oxidation conditions on electrical properties of SiC‐SiO2interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346873
Reference11 articles.
1. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
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3. Epitaxial growth and electric characteristics of cubic SiC on silicon
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5. Behavior of inversion layers in 3C silicon carbide
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