SiO2/SiC structures annealed in D218O: Compositional and electrical effects
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4869124
Reference33 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. Silica on Silicon Carbide
3. Interface Passivation for Silicon Dioxide Layers on Silicon Carbide
4. Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC(0001) interface and its correlation with electrical properties
5. Intrinsic origin of negative fixed charge in wet oxidation for silicon carbide
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1. Unraveling the mechanisms responsible for the interfacial region formation in 4H-SiC dry thermal oxidation;Journal of Applied Physics;2017-12-07
2. Influence of CO annealing in metal-oxide-semiconductor capacitors with SiO2 films thermally grown on Si and on SiC;Journal of Applied Physics;2016-01-14
3. Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system;AIP Advances;2015-08
4. Deuterium absorption from the D2O exposure of oxidized 4H-SiC (0001), ( 0001¯), and ( 112¯0) surfaces;Applied Physics Letters;2015-03-23
5. Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties;Applied Physics Letters;2014-11-10
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