Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC(0001) interface and its correlation with electrical properties-Reference-Cited by-同舟云学术

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Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC(0001) interface and its correlation with electrical properties

Published:2011-07-11 Issue:2 Volume:99 Page:021907
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Watanabe Heiji,Hosoi Takuji,Kirino Takashi,Kagei Yusuke,Uenishi Yusuke,Chanthaphan Atthawut,Yoshigoe Akitaka,Teraoka Yuden,Shimura Takayoshi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3610487

Reference16 articles.

1. Observation of interfacial atomic steps during silicon oxidation

2. Dynamic observations of interface propagation during silicon oxidation

3. Microscopic structure of theSiO2/Si interface

4. Periodic Changes in $\bf SiO_{2}/Si(111)$ Interface Structures with Progress of Thermal Oxidation

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