Low-Temperature Annealing in O<sub>2</sub> to Annihilate the Fixed Charges in 4H-SiC/SiO<sub>2</sub> Interface Induced by High-N-Density Nitridation Process-Reference-Cited by-同舟云学术

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Low-Temperature Annealing in O₂ to Annihilate the Fixed Charges in 4H-SiC/SiO₂ Interface Induced by High-N-Density Nitridation Process

Published:2024-07 Issue:7 Volume:45 Page:1145-1148
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yang Tianlin¹^ORCID,Onaya Takashi²,Kita Koji³^ORCID

Affiliation:

1. Department of Materials Engineering, The University of Tokyo, Tokyo, Bunkyo, Japan

2. Department of Advanced Materials Science, The University of Tokyo, Chiba, Kashiwa, Japan

3. Department of Materials Engineering and the Department of Advanced Materials Science, The University of Tokyo, Chiba, Kashiwa, Japan

Funder

JSPS KAKENHI

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10577506/10530277.pdf?arnumber=10530277

Reference31 articles.

1. Series Resistance, Channel Length and Width, and Threshold Voltage

2. Carrier transport properties in inversion layer of Si-face 4H–SiC MOSFET with nitrided oxide

3. Coulomb-limited mobility in 4H-SiC MOS inversion layer as a function of inversion-carrier average distance from MOS interface

4. Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements

5. Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing

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