Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118773
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5. Electrical properties of thermal oxide grown using dry oxidation onp‐type 6H‐silicon carbide
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