Author:
Dhar Sarit,Wang Shurui,Williams John R.,Pantelides Sokrates T.,Feldman Leonard C.
Abstract
AbstractSilicon carbide is a promising semiconductor for advanced power devices that can outperform Si devices in extreme environments (high power, high temperature, and high frequency). In this article, we discuss recent progress in the development of passivation techniques for the SiO2/4H-SiC interface critical to the development of SiC metal oxide semiconductor field-effect transistor (MOSFET) technology. Significant reductions in the interface trap density have been achieved, with corresponding increases in the effective carrier (electron) mobility for inversion-mode 4H-SiC MOSFETs. Advances in interface passivation have revived interest in SiC MOSFETs for a potentially lucrative commercial market for devices that operate at 5 kV and below.
Publisher
Springer Science and Business Media LLC
Subject
Physical and Theoretical Chemistry,Condensed Matter Physics,General Materials Science
Cited by
74 articles.
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