Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties-Reference-Cited by-同舟云学术

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Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

Published:2014-11-10 Issue:19 Volume:105 Page:191602
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Gang¹^ORCID,Xu Can¹²,Yakshinskiy Boris²,Wielunski Leszek²,Gustafsson Torgny²,Bloch Joseph¹³,Dhar Sarit⁴,Feldman Leonard C.¹²

Affiliation:

1. Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854, USA

2. Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA

3. NRCN, Beer-Sheva 84190, Israel

4. Department of Physics, Auburn University, Auburn, Alabama 36849, USA

Funder

II-VI Foundation

National Science Foundation (NSF)

U.S. Army Research Laboratory (ARL)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4901719

Reference29 articles.

1. Fundamentals of Silicon Carbide Technology

2. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

3. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

4. Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A new 4H-SiC hydrogen sensor with oxide ramp termination;Materials Science in Semiconductor Processing;2016-02

2. Silicon carbide: A unique platform for metal-oxide-semiconductor physics;Applied Physics Reviews;2015-06

3. Deuterium absorption from the D2O exposure of oxidized 4H-SiC (0001), ( 0001¯), and ( 112¯0) surfaces;Applied Physics Letters;2015-03-23

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