A new 4H-SiC hydrogen sensor with oxide ramp termination-Reference-Cited by-同舟云学术

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A new 4H-SiC hydrogen sensor with oxide ramp termination

Published:2016-02 Issue: Volume:42 Page:268-272
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Pascu Razvan,Kusko Mihaela,Craciunoiu Florea,Pristavu Gheorghe,Brezeanu Gheorghe,Badila Marian,Avramescu Viorel

Funder

National Program PN2

Ministry of European Funds

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference42 articles.

1. Hydrogen sensors – A review

2. Hydrogen Gas Sensors Based on Semiconductor Oxide Nanostructures

3. SiC for sensors and high-temperature electronics

4. Advances of SiC-based MOS capacitor hydrogen sensors for harsh environment applications

5. MOS hydrogen sensor with very fast response based on ultra-thin thermal SiO2 film

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1. A Comprehensive Review of Recent Progress, Prospect and Challenges of Silicon Carbide and its Applications;Silicon;2022-06-30

2. PLL-Based Readout Circuit for SiC-MOS Capacitor Hydrogen Sensors in Industrial Environments;Sensors;2022-02-14

3. Investigation on a novel SiC Schottky barrier diode hydrogen sensor with trench-insulator structure;Materials Research Express;2021-03-01

4. 60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes;Sensors;2021-01-31

5. Nickel silicide compounds investigation obtained at low and high temperatures;2019 International Semiconductor Conference (CAS);2019-10

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