Deuterium absorption from the D2O exposure of oxidized 4H-SiC (0001), ( 0001¯), and ( 112¯0) surfaces-Reference-Cited by-同舟云学术

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Deuterium absorption from the D2O exposure of oxidized 4H-SiC (0001), ( 0001¯), and ( 112¯0) surfaces

Published:2015-03-23 Issue:12 Volume:106 Page:123502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Gang¹^ORCID,Xu Can¹²,Yakshinskiy Boris²,Wielunski Leszek²,Gustafsson Torgny²,Bloch Joseph¹³,Dhar Sarit⁴,Feldman Leonard C.¹²

Affiliation:

1. Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854, USA

2. Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA

3. NRCN, Beer-Sheva 84190, Israel

4. Department of Physics, Auburn University, Auburn, Alabama 36849, USA

Funder

II-VI Foundation

National Science Foundation (NSF)

U.S. Army Research Laboratory (ARL)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4916266

Reference29 articles.

1. High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing

2. Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC($000\bar{1}$) Metal–Oxide–Semiconductor Field-Effect Transistors

3. Improvement of Interface State and Channel Mobility Using 4H-SiC (0-33-8) Face

4. Improvement of Channel Mobility in 4H-SiC C-Face MOSFETs by H₂ Rich Wet Re-Oxidation

5. Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon carbide: A unique platform for metal-oxide-semiconductor physics;Applied Physics Reviews;2015-06

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