Affiliation:
1. Denso Corporation
2. R&D Partnership for Future Power Electronics Technology
Abstract
We studied the annealing process to improve the field-effect channel mobility (μFE) on the
4H-SiC (11-20) face. We found that wet annealing, in which a wet atmosphere was maintained during
the cooling-down period to 600°C after wet oxidation, was effective. The interface states (Dit) near
the conduction band edge decreased and the μFE increased up to 244 cm2/Vs. Furthermore, the origin
of this high channel mobility was investigated using secondary ion mass spectroscopy (SIMS)
measurement and thermal desorption spectroscopy (TDS) analysis. It was indicated that the hydrogen
density at the MOS interface was increased by the wet annealing and the hydrogen was desorbed
mainly at temperatures between 800 °C and 900 °C. These hydrogen desorption temperatures also
corresponded to the temperatures of the μFE reduction by argon annealing after the wet annealing.
These results indicated that this high channel mobility was achieved by hydrogen passivation during
the wet annealing at temperatures between 800 °C and 900 °C.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
27 articles.
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