Electrically detected-magnetic-resonance identifications of defects at 4H-SiC(000 1 ¯)/SiO2 interfaces with wet oxidation
Author:
Affiliation:
1. Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573, Japan
2. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8569, Japan
Funder
Council for Science, Technology and Innovation
Ministry of Education, Culture, Sports, Science and Technology
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5116170
Reference23 articles.
1. Fundamentals of Silicon Carbide Technology
2. Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(0001̄) face
3. Investigation of origins of the critically different MOS interface characteristics between dry-oxidized and wet-oxidized silicon carbide
4. Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face
5. Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements
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1. Differences between Polar-Face and Non-Polar Face 4H-SiC/SiO<sub>2 </sub>Interfaces Revealed by Magnetic Resonance Spectroscopy;Defect and Diffusion Forum;2024-08-22
2. All-Electrical Readout of Coherently Controlled Spins in Silicon Carbide;Physical Review Letters;2024-04-04
3. Energy levels of carbon dangling-bond center (PbC center) at 4H-SiC(0001)/SiO2 interface;APL Materials;2023-11-01
4. Charge pumping electrically detected magnetic resonance of silicon carbide power transistors;Journal of Applied Physics;2023-08-03
5. Theoretical investigation of vacancy related defects at 4H-SiC(0001̅)/SiO2 interface after wet oxidation;Japanese Journal of Applied Physics;2022-03-25
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