Charge pumping electrically detected magnetic resonance of silicon carbide power transistors

Author:

Lew C. T.-K.1ORCID,Sewani V. K.2ORCID,Ohshima T.34ORCID,McCallum J. C.1ORCID,Johnson B. C.5ORCID

Affiliation:

1. School of Physics, University of Melbourne 1 , Melbourne, Victoria 3010, Australia

2. Centre for Quantum Computing and Communication Technology, University of New South Wales 2 , Kensington, New South Wales 2052, Australia

3. National Institutes for Quantum Science and Technology 3 , 1233 Watanuki, Takasaki 370-1292, Japan

4. Department of Materials Science, Tohoku University 4 , 6-6-02 Aramaki-Aza, Aoba-ku, Sendai 980-8579, Japan

5. School of Science, RMIT University 5 , Melbourne, Victoria 3001, Australia

Abstract

Silicon carbide (SiC) power devices are becoming central components in high voltage electronics. However, defects at interfaces and in the bulk continue to severely impact their reliability and performance. Here, we develop a charge pumping method to characterize SiC/SiO2 interface defects in fully fabricated commercial SiC power metal–oxide–semiconductor field-effect transistors (MOSFETs). The method is then used to address spin states at the SiC/SiO2 interface via charge pumping electrically detected magnetic resonance (CP-EDMR). We apply these methods to investigate the power MOSFET after electron irradiation over a dose range of 1013−1017 cm−2. We finally discuss CP-EDMR as a technique to interrogate spins during device operation for real-time monitoring of the device quality, performance, and degradation and as a probe for local magnetic fields.

Funder

JSPS KAKENHI

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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