Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements-Reference-Cited by-同舟云学术

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Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements

Published:2017-03-01 Issue:4 Volume:10 Page:046601
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Hatakeyama Tetsuo,Kiuchi Yuji,Sometani Mitsuru,Harada Shinsuke,Okamoto Dai,Yano Hiroshi,Yonezawa Yoshiyuki,Okumura Hajime

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/10/i=4/a=046601/pdf

Reference22 articles.

1. Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC

2. Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance

3. Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)

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1. Differences between Polar-Face and Non-Polar Face 4H-SiC/SiO<sub>2 </sub>Interfaces Revealed by Magnetic Resonance Spectroscopy;Defect and Diffusion Forum;2024-08-22

2. Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO₂ interfaces with gate oxides annealed in NO or POCl₃;Applied Physics Express;2024-08-01

3. Origin and Recovery of Negative VTH Shift on 4H–SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements;Materials Science in Semiconductor Processing;2024-07

4. Low-Temperature Annealing in O₂ to Annihilate the Fixed Charges in 4H-SiC/SiO₂ Interface Induced by High-N-Density Nitridation Process;IEEE Electron Device Letters;2024-07

5. Study on the Oxygen Partial Pressure Dependent Annealing Effect for SiO₂/SiC Stack;Advanced Electronic Materials;2024-06-28

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