Origin and Recovery of Negative VTH Shift on 4H–SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements
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Published:2024-07
Issue:
Volume:177
Page:108389
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ISSN:1369-8001
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Container-title:Materials Science in Semiconductor Processing
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language:en
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Short-container-title:Materials Science in Semiconductor Processing
Author:
Marcuzzi A.ORCID,
Avramenko M.,
De Santi C.,
Geenen F.,
Moens P.,
Meneghesso G.,
Zanoni E.,
Meneghini M.