Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface-Reference-Cited by-同舟云学术

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Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface

Published:2008-06-15 Issue:12 Volume:103 Page:124513
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Rozen John,Dhar Sarit,Dixit S. K.,Afanas’ev V. V.,Roberts F. O.,Dang H. L.,Wang Sanwu,Pantelides S. T.,Williams J. R.,Feldman L. C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2940736

Reference40 articles.

1. Bonding at theSiC−SiO2Interface and the Effects of Nitrogen and Hydrogen

2. Investigation of nitric oxide and Ar annealed SiO2/SiC interfaces by x-ray photoelectron spectroscopy

3. Slow-trap profiling of NO and N2O nitrided oxides grown on Si and SiC substrates

4. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

5. Effects of nitridation in gate oxides grown on 4H-SiC

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