Effects of nitridation in gate oxides grown on 4H-SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1412579
Reference27 articles.
1. Observation of Carbon Clusters at the 4H-SiC/SiO2 Interface
2. Electronic properties of interfaces
3. Nitridation of silicon-dioxide films grown on 6H silicon carbide
4. Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing
5. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
Cited by 247 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study on the Oxygen Partial Pressure Dependent Annealing Effect for SiO2/SiC Stack;Advanced Electronic Materials;2024-06-28
2. Characterization of nitrided SiC(1 1‾ 00) MOS structures by means of electrical measurements and X-ray photoelectron spectroscopy;Materials Science in Semiconductor Processing;2024-06
3. Generation of single photon emitters at a SiO2/SiC interface by high-temperature oxidation and reoxidation at lower temperatures;Applied Physics Express;2024-05-01
4. The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor;Electronics;2024-01-31
5. Effect of Temperature-Dependent Low Oxygen Partial Pressure Annealing on SiC MOS;Nanomaterials;2024-01-15
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3