Synergistic Effect of Negative Bias Instability and Total Ionizing Dose on SiC MOSFETs-Reference-Cited by-同舟云学术

Synergistic Effect of Negative Bias Instability and Total Ionizing Dose on SiC MOSFETs

Published:2023-08 Issue:8 Volume:70 Page:1990-1994
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Tang Yun¹^ORCID,Wang Lei²^ORCID,Cai Xiaowu²,Hu Dongqing³,Dong Bin⁴,Ding Liqiang²,Gao Yuexin²,Xia Ruirui²,Gao Mali²,Wang Shiping²^ORCID,Dang Jianying²,Zhao Fazhan²^ORCID,Li Bo²^ORCID

Affiliation:

1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

2. Institute of Microelectronics and the Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing, China

3. Power Semiconductor and Integrated Circuit Laboratory, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China

4. Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou, China

Funder

National Natural Science Foundation of China

Key Research Program of Frontier Sciences, Chinese Academy of Sciences

Innovation Center of Radiation Application Project, China Institute of Atomic Energy

Institute of Modern Physics Project, Chinese Academy of Science

Youth Innovation Promotion Association CAS and GDAS’ Project of Science and Technology Development

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/10221199/10115508.pdf?arnumber=10115508

Reference20 articles.

1. Impact of Different Gate Biases on Irradiation and Annealing Responses of SiC MOSFETs

2. Effects of Bias on the Irradiation and Annealing Responses of 4H-SiC MOS Devices

3. Correlating the Radiation Response of MOS Capacitors and Transistors

4. Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs;murata;Phys Status Solidi A,2016

5. Interfacial damage extraction method for SiC power MOSFETs based on C-V characteristics

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