Physics-Based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs-Reference-Cited by-同舟云学术

Physics-Based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs

Published:2024-05 Issue:5 Volume:71 Page:5285-5295
ISSN:0278-0046
Container-title:IEEE Transactions on Industrial Electronics
language:
Short-container-title:IEEE Trans. Ind. Electron.

Author:

Aviñó-Salvadó Oriol¹^ORCID,Buttay Cyril²^ORCID,Bonet Ferran¹^ORCID,Raynaud Christophe²^ORCID,Bevilacqua Pascal²,Rebollo Jose¹^ORCID,Morel Hervé²^ORCID,Perpiñà Xavier¹^ORCID

Affiliation:

1. Institut de Microelectrònica de Barcelona-Centre Nacional de Microelectrònica (IMB-CNM, CSIC), Esfera UAB, Barcelona, Bellaterra, Spain

2. Univ Lyon, CNRS, INSA Lyon, Université Claude Bernard Lyon 1, Villeurbanne, France

Funder

AEI

H2020-ECSEL

Agència de Gestió d'Ajuts Universitaris i de Recerca

IMB-CNM

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

http://xplorestaging.ieee.org/ielx7/41/10372144/10144590.pdf?arnumber=10144590

Reference51 articles.

1. Three Phase LLC Series Resonant DC/DC Converter Using SiC MOSFETs to Realize High Voltage and High Frequency Operation

2. A 300-kHz 6.6-kW SiC Bidirectional LLC Onboard Charger

3. Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs

4. A Survey of Wide Bandgap Power Semiconductor Devices

5. Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review

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