Ionization Radiation-Induced Reliability Degradation of SiC Power MOSFET-Reference-Cited by-同舟云学术

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Ionization Radiation-Induced Reliability Degradation of SiC Power MOSFET

Published:2023-12 Issue:12 Volume:70 Page:6480-6485
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Xiao Yiping¹^ORCID,Liu Chaoming¹,Zhang Yanqing²^ORCID,Qi Chunhua²^ORCID,Ma Guoliang²,Wang Tianqi³^ORCID,Huo Mingxue²

Affiliation:

1. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, China

2. Space Environments Simulation Research Infrastructure, Harbin Institute of Technology, Harbin, China

3. Frontiers Science Center for Matter Behave in Space Environment, Harbin Institute of Technology, Harbin, China

Funder

National Natural Science Foundation of China

Innovation Foundation of Shanghai Aerospace Science and Technology

State Key Laboratory of Intense Pulsed Radiation Simulation and Effect

China Postdoctoral Science Foundation Funded Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10328902/10304093.pdf?arnumber=10304093

Reference28 articles.

1. Investigation of the reliability of 4H–SiC MOS devices for high temperature applications

2. A Charge-to-Breakdown (QBD) Approach to SiC Gate Oxide Lifetime Extraction and Modeling

3. Electron trap center generation due to hole trapping in SiO2under Fowler–Nordheim tunneling stress

4. Trap generation and occupation dynamics in SiO2under charge injection stress

5. Anomalous TDDB Statistics of Gate Dielectrics Caused by Charging-Induced Dynamic Stress Relaxation Under Constant–Voltage Stress

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Accumulated Radiation Effects on Single-Event Burnout in SiC MOSFETs;IEEE Transactions on Nuclear Science;2024-08

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