Author:
Silk John R.,Veliadis Victor,Tenaglia Dario,Badalà Paolo,Rascuna Simone
Publisher
Springer Nature Switzerland
Reference29 articles.
1. S. Ortolland, C. Raynaud, J.P. Chante, M.L. Locatelli, A.A. Lebedev, A.N. Andreev, N.S. Savkina, V.E. Chelnokov, M.G. Rastegaeva, A.L. Syrkin, Effect of boron diffusion on high-voltage behavior of 6H-SiC p+nn+ structures. J. Appl. Phys. 80, 5464–5468 (1996)
2. E. Oliviero, M. Lazar, H. Vang, C. Dubois, P. Cremillieu, J.L. Leclercq, J. Dazord, D. Planson, Use of graphite cap to reduce unwanted post-implantation annealing effects in SiC. Mater. Sci. Forum 556–557, 611–614 (2007)
3. K.A. Jones, M.C. Wood, T.S. Zheleva, K.W. Kirchner, M.A. Derenge, A. Bolonikov, T.S. Sudarshan, R.D. Vispute, S.S. Hullavarad, S. Dhar, Comparison of graphite and BN/AlN annealing caps for ion implanted SiC. Mater. Sci. Forum 556-557, 575–6578 (2007)
4. V. Veliadis, L.S. Chen, E. Stewart, M. McCoy, T. McNutt, S. Van Campen, C. Clarke, G. DeSalvo, 2.1 mΩ-cm2, 1.6 kV 4H-Silicon Carbide JFET for power applications, in International Semiconductor Device Research Symposium, presentation TP2-04, December 2005
5. V. Veliadis, M. Snook, T. McNutt, H. Hearne, P. Potyraj, A. Lelis, C. Scozzie, A 2055-V (at 0.7 mA/cm2), 24-A (at 706 W/cm2) normally-ON 4H-SiC JFET with 0.068-cm2 active area and blocking voltage capability of 94% of the SiC material limit. IEEE Electron Dev. Lett. 29(12), 1325–1327 (2008)