Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3673572
Reference20 articles.
1. 4H-SiC Trench Metal Oxide Semiconductor Field Effect Transistors with Low On-Resistance
2. Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors
3. “Carbon cluster model” for electronic states at interfaces
4. Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC
5. Relationship between channel mobility and interface state density in SiC metal–oxide–semiconductor field-effect transistor
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1. Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model;Japanese Journal of Applied Physics;2024-01-01
2. Energy levels of carbon dangling-bond center (PbC center) at 4H-SiC(0001)/SiO2 interface;APL Materials;2023-11-01
3. Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs;Japanese Journal of Applied Physics;2023-11-01
4. Passivation of hole traps in SiO2/GaN metal-oxide-semiconductor devices by high-density magnesium doping;Applied Physics Express;2023-10-01
5. Sources of error and methods to improve accuracy in interface state density analysis using quasi-static capacitance–voltage measurements in wide bandgap semiconductors;Journal of Applied Physics;2023-09-25
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