Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors-Reference-Cited by-同舟云学术

Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors

Published:2008-06-02 Issue:7 Volume:245 Page:1378-1389
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Pensl Gerhard,Beljakowa Svetlana,Frank Thomas,Gao Kunyuan,Speck Florian,Seyller Thomas,Ley Lothar,Ciobanu Florin,Afanas'ev Valery,Stesmans Andre,Kimoto Tsunenobu,Schöner Adolf

Funder

German Science Foundation

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.200844011/fullpdf

Reference42 articles.

1. Anisotropy of the electron Hall mobility in 4H, 6H, and 15R silicon carbide

2. Reduction of doping and trap concentrations in 4H–SiC epitaxial layers grown by chemical vapor deposition

3. Electrical properties of thermal oxide grown onn‐type 6H‐silicon carbide

4. The silicon-silicon dioxide system: Its microstructure and imperfections

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