Electrical properties of thermal oxide grown onn‐type 6H‐silicon carbide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111443
Reference7 articles.
1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
2. The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications
3. Thermal oxidation and electrical properties of silicon carbide metal‐oxide‐semiconductor structures
4. Thermal Oxidation of SiC and Electrical Properties of Al–SiO2–SiC MOS Structure
5. Fowler‐Nordheim Tunneling into Thermally Grown SiO2
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