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Fowler–Nordheim electron tunneling mechanism in Ni/SiO2/n-4H SiC MOS devices

  • Published:2015-12 Issue: Volume:114 Page:104-110
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Kodigala Subba Ramaiah,Chattopadhyay S.,Overton C.,Ardoin I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Fundamentals of silicon carbide technology: growth characterization, devices and applications;Kimoto,2014

2. Defects in SiO2 and related dielectrics: science and technology,2000

3. Effect of C∕Si ratio on deep levels in epitaxial 4H–SiC

4. High-field-induced degradation in ultra-thin SiO/sub 2/ films

5. Ion beam mixing for enhanced electron tunneling in metal‐oxide‐silicon structures

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