High-field-induced degradation in ultra-thin SiO/sub 2/ films-Reference-Cited by-同舟云学术

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High-field-induced degradation in ultra-thin SiO/sub 2/ films

Published:1988 Issue:12 Volume:35 Page:2259-2267
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Olivo P.,Nguyen T.N.,Ricco B.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/449/00008801.pdf?arnumber=8801

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