Funder
National Science Foundation
Office of Naval Research
U.S. Department of Energy
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference54 articles.
1. Evaluation of LPCVD SiNx gate dielectric reliability by TDDB measurement in Si-substrate-based AlGaN/GaN MIS-HEMT;Qi;IEEE Trans. Electron Devices,2018
2. Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs;Wu,2015
3. Progressive breakdown in high-voltage GaN MIS-HEMTs;Warnock,2016
4. Improved stability of GaN MIS-HEMT with 5-nm plasma-enhanced atomic layer deposition SiN gate dielectric;Liu;IEEE Electron Device Lett.,2022
5. Time-dependent dielectric breakdown under AC stress in GaN MIS-HEMTs;Lee,2019