Effect of C∕Si ratio on deep levels in epitaxial 4H–SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2161388
Reference13 articles.
1. Z1/Z2Defects in4H−SiC
2. Annealing behavior of vacancies and Z1/2 levels in electron-irradiated 4H–SiC studied by positron annihilation and deep-level transient spectroscopy
3. Transient capacitance measurements on resistive samples
4. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
5. Deep-level transient spectroscopy measurements using high Schottky barriers
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