Z1/Z2Defects in4H−SiC
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.90.225502/fulltext
Reference36 articles.
1. Formation of the Z1,2 deep-level defects in 4H-SiC epitaxial layers: Evidence for nitrogen participation
2. High-purity and high-quality 4H–SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition
3. Radiation-induced defect centers in 4H silicon carbide
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