Directly Confirming the Z 1/2 Center as the Electron Trap in SiC Through Accessing the Nonradiative Recombination-Reference-Cited by-同舟云学术

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Directly Confirming the Z 1/2 Center as the Electron Trap in SiC Through Accessing the Nonradiative Recombination

Published:2021-11-14 Issue:2 Volume:16 Page:2100458
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Physica Rapid Research Ltrs

Author:

Gu Yuxiang¹²,Shi Lin³,Luo Jun-Wei¹²^ORCID,Li Shu-Shen¹²,Wang Lin-Wang⁴

Affiliation:

1. State key laboratory of superlattices and microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

2. Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China

3. Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou 215123 China

4. Materials Science Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202100458

Reference64 articles.

1. Material science and device physics in SiC technology for high-voltage power devices

2. Ionization-induced annealing of pre-existing defects in silicon carbide

3. Deep level centers in silicon carbide: A review

4. Room temperature coherent control of defect spin qubits in silicon carbide

5. High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

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1. Hyperdoping of germanium with argon toward strain-doping-induced indirect-to-direct bandgap transition in Ge;Applied Physics Letters;2024-07-29

2. Clarifying the atomic origin of electron killers in β-Ga₂O₃ from the first-principles study of electron capture rates;Journal of Semiconductors;2022-11-01

3. Antisite Defect Si _C as a Source of the D _I Center in 4H‐SiC;physica status solidi (RRL) – Rapid Research Letters;2022-10-13

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