Formation of the Z1,2 deep-level defects in 4H-SiC epitaxial layers: Evidence for nitrogen participation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1529314
Reference18 articles.
1. Nitrogen donors and deep levels in high‐quality 4H–SiC epilayers grown by chemical vapor deposition
2. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy
3. Deep level defects in electron-irradiated 4H SiC epitaxial layers
4. Low-dose ion implanted epitaxial 4H–SiC investigated by deep level transient spectroscopy
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