Comparison of the effects of continuous and intermittent electron irradiation on commercial 4H-SiC Schottky barrier diodes
Author:
Funder
Natural Science Foundation of Sichuan Province
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference28 articles.
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3. High energy proton irradiation effects on SiC Schottky rectifiers;Nigam;Appl. Phys. Lett.,2002
4. Dynamic measurements of radiation-induced electrical property modifications in CVD-SiC under fast neutron irradiation;Tsuchiya;J. Nucl. Mater.,2014
5. Deep level defects in electron-irradiated 4H SiC epitaxial layers;Hemmingsson;J. Appl. Phys.,1997
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