Comparative study by IBIC of Si and SiC diodes irradiated with high energy protons-Reference-Cited by-同舟云学术

Comparative study by IBIC of Si and SiC diodes irradiated with high energy protons

Published:2016-04 Issue: Volume:372 Page:143-150
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Garcia Lopez J.,Jimenez-Ramos M.C.^ORCID,Rodriguez-Ramos M.,Ceballos J.,Linez F.,Raisanen J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference39 articles.

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4. Physics and Technology of Silicon Carbide Devices, Chapter 16: Radiation response of Silicon Carbide diodes and transistors, T. Ohshima et al. ISBN 978-953-51-0917-4. 2012.

5. IAEA CRP n. F11016, .

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