Funder
National Natural Science Foundation of China
Science and Technology Department of Sichuan Province
National Synchrotron Radiation Laboratory
Reference44 articles.
1. Impact of electron irradiation on the ON-state Characteristics of a 4H-SiC JBS Diode[J];Vobecky;IEEE Trans. Electron Devices,2015
2. High-voltage SiC power devices for improved energy efficiency;Kimoto;Proc. Jpn. Acad., Ser. B,2022
3. Wide bandgap semiconductor detectors for harsh radiation environments;Grant;Nucl. Instrum. Methods Phys. Res. A,2005
4. A.Siddiqui, A. Hallén, M. Usman, Proton Irradiation-Induced Displacement Damage in 650 V Si and SiC Power Diodes. Phys. Status Solidi A 220 (21), Article 2300300(2023).
5. F. Nava, G. Bertuccio, A. Cavallini, E. Vittone, Silicon carbide and its use as a radiation detector material. Meas. Sci. Technol. 19 (10), 102001-102001 (25)(2008).
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献