Deep level defects in electron-irradiated 4H SiC epitaxial layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.364397
Reference12 articles.
1. Electrical and optical characterization of SiC
2. Deep centers and electroluminescence in 4HSiC diodes with a p-type base region
3. Nitrogen donors and deep levels in high‐quality 4H–SiC epilayers grown by chemical vapor deposition
4. High quality 4H‐SiC epitaxial layers grown by chemical vapor deposition
5. Determination of the electron effective-mass tensor in 4HSiC
Cited by 291 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC;Journal of Applied Physics;2024-09-06
2. Influence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiC;Solid State Phenomena;2024-08-22
3. Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing;Journal of Semiconductors;2024-07-01
4. Depth profiles of deep levels generated in the tail region of Al ion implantation into n-type 4H-SiC;Japanese Journal of Applied Physics;2024-06-03
5. Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates;Semiconductor Science and Technology;2024-05-21
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3