Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1663719
Reference13 articles.
1. Light-emitting diodes
2. Thermally stimulated capacitance for shallow majority‐carrier traps in the edge region of semiconductor junctions
3. Thermally Stimulated Capacitance (TSCAP) in p‐n Junctions
4. Thermally Stimulated Capacitance (TSCAP) in p‐n Junctions
5. Thermally Stimulated Capacitance (TSCAP) in p‐n Junctions
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