Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference48 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. Fundamentals of Silicon Carbide Technology: Growth Characterization, Devices and Applications;Kimoto,2014
3. G. Pacchioni, L. Skuja, D.L. Griscom, Defects in SiO2 and Related Dielectrics: Science and Technology, Chapter SiC/SiO2 Interface Defects by V.V. Afanas’ev, Nato Science Series, Kluwer Academic Publications, April 8–20, 2000, p. 581.
4. Effect of C∕Si ratio on deep levels in epitaxial 4H–SiC
5. R.N. Ghosh, R. Loloee, Proceedings of the 2011 International Natural Conference SiC and Related Material: Material Science Forum, Paper 412.
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