Annealing behavior of vacancies and Z1/2 levels in electron-irradiated 4H–SiC studied by positron annihilation and deep-level transient spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1426259
Reference18 articles.
1. Deep level defects in electron-irradiated 4H SiC epitaxial layers
2. Doping of n-type 6H–SiC and 4H–SiC with defects created with a proton beam
3. Pseudodonor nature of the DI defect in 4H-SiC
4. Correlation between DLTS and Photoluminescence in He-implanted 6H-SiC
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3. Origin and anomalous behavior of dominant defects in 4H-SiC studied by conventional and Laplace deep level transient spectroscopy;Journal of Applied Physics;2020-02-14
4. Anisotropic and plane-selective migration of the carbon vacancy in SiC: Theory and experiment;Physical Review B;2019-07-08
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