Origin and anomalous behavior of dominant defects in 4H-SiC studied by conventional and Laplace deep level transient spectroscopy-Reference-Cited by-同舟云学术

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Origin and anomalous behavior of dominant defects in 4H-SiC studied by conventional and Laplace deep level transient spectroscopy

Published:2020-02-14 Issue:6 Volume:127 Page:064503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Gelczuk Ł.¹^ORCID,Dąbrowska-Szata M.¹^ORCID,Kolkovsky Vl.²^ORCID,Sochacki M.³^ORCID,Szmidt J.³^ORCID,Gotszalk T.¹^ORCID

Affiliation:

1. Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland

2. Technische Universität Dresden, 01062 Dresden, Germany

3. Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, Warsaw 00-662, Poland

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5140731

Reference43 articles.

1. P. G. Neudeck and S. Technology, in The VLSI Handbook, 2nd ed., edited by W.K. Chen (Florida CRC Press, Boca Raton, 2007), pp. 5.1–5.3.

2. Deep level centers in silicon carbide: A review

3. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

4. Identification and carrier dynamics of the dominant lifetime limiting defect in n- 4H-SiC epitaxial layers

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3. The structural, mechanical and electrical properties of 2D SiC with C-related point defects and substitution of C by foreign atoms;Vacuum;2023-02

4. Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress;Materials;2022-11-19

5. The structural and electronic properties of Carbon-related point defects on 4H-SiC (0001) surface;Applied Surface Science;2022-04

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