Doping of n-type 6H–SiC and 4H–SiC with defects created with a proton beam
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1309055
Reference17 articles.
1. Modification of semiconductors with proton beams. A review
2. Deep level defects in alpha particle irradiated 6H silicon carbide
3. High-resistance layers inn-type 4H-silicon carbide by hydrogen ion implantation
4. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy
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