The effects of stress on interfacial properties and flatband voltage instability of 4H-SiC MOS structures-Reference-Cited by-同舟云学术

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The effects of stress on interfacial properties and flatband voltage instability of 4H-SiC MOS structures

Published:2023-08 Issue: Volume:147 Page:115041
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Lu Wenhao,Wan Caiping,Ge Niannian,Ye Tianchun,Xu Hengyu

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Material science and device physics in SiC technology for high-voltage power devices;Kimoto;Jan. J. Appl. Phys.,2015

2. Effects of sequential annealing in low oxygen partial-pressure and NO on 4H-SiC MOS devices;Luo;Semicond. Sci. Technol.,2021

3. Ultrahigh-temperature oxidation of 4H-SiC (0001) and gate oxide reliability dependence on oxidation temperature;Wan;J. Cryst. Growth,2020

4. A highly efficient annealing process with supercritical N2O at 120 °C for SiO2/4H–SiC interface;Wang;IEEE T. Electron. Dev.,2021

5. Defect engineering in SiC technology for high-voltage power devices;Kimoto;Appl. Phys. Express,2020

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