The extraction of gate oxide thickness on silicon carbide wide-bandgap material using thermal oxidation based regression techniques for high-power applications
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Publisher
AIP Publishing
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0193377
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5. S. Kumar and J. Akhtar, “Thermal Oxidation of Silicon Carbide (SiC) – Experimentally Observed Facts,” Silicon Carbide - Mater. Process. Appl. Electron. Devices, 2011.
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