Reduction of doping and trap concentrations in 4H–SiC epitaxial layers grown by chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1413724
Reference16 articles.
1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
2. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
3. Site‐competition epitaxy for superior silicon carbide electronics
4. Growth of SiC by ?Hot-Wall? CVD and HTCVD
5. Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition
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3. Insights on the Quality of 4h-Sic Layers Epitaxially Grown on Homogeneous Substrates by Changing the Rotational Speed of Susceptor in the Cvd Reactor;2023
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