Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3131845
Reference42 articles.
1. Status and prospects for SiC power MOSFETs
2. Silicon Carbide Power Devices
3. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
4. Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing
5. Reliability of Nitrided Oxides in N- and P-type 4H-SiC MOS Structures
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