Silicon Carbide Power Devices
Author:
Affiliation:
1. North Carolina State UniversityUSA
Publisher
WORLD SCIENTIFIC
Cited by 74 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Giant Enhancement of Hole Mobility for 4H-Silicon Carbide through Suppressing Interband Electron–Phonon Scattering;Nano Letters;2024-08-06
2. Degradation in Electrothermal Characteristics and Failure Mechanism of SiC JBS With Different Die Attach Materials Under 300 ∘C Power Cycle Stress;IEEE Journal of Emerging and Selected Topics in Power Electronics;2024-08
3. Impact of the Threshold Dispersity Evolution on the Current Sharing of Parallel SiC MOSFETs;IEEE Transactions on Power Electronics;2024-05
4. Comparative study of mechanical stress-induced flat-band voltage change in MOS capacitor and threshold voltage change in MOSFET fabricated on 4H-SiC (0001);Japanese Journal of Applied Physics;2024-03-01
5. Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC);Microelectronic Engineering;2024-01
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