Improvement of Channel Mobility in 4H-SiC C-Face MOSFETs by H2 Rich Wet Re-Oxidation
Author:
Affiliation:
1. National Institute of Advanced Industrial Science and Technology (AIST)
2. Fuji Electric Advanced Technology Co., Ltd.
Abstract
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.778-780.975.pdf
Reference6 articles.
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5. B. E. Deal, D. W. Hess, J. D. Plummer, and C. P. Ho, J. Electrochem. Soc. 125 (1978) 339-346.
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